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Número de pieza(s) : T431616A T431616A-7S T431616A-7C T431616A-7SI T431616A-7CI
Taiwan Memory Technology
componentes Descripción : 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
Número de pieza(s) : T431616A-7C T431616A-7CI T431616A-7S T431616A-7SI T431616A
Taiwan Memory Technology
componentes Descripción : 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
Número de pieza(s) : T431616D-5SC T431616D-6SC T431616E-7SC
Taiwan Memory Technology
componentes Descripción : 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
Número de pieza(s) : T431616D T431616D-5S T431616D-5SG T431616D-6S T431616D-6SG T431616D-7S T431616D-7SG T431616E T431616E-7S T431616E-7SG
Taiwan Memory Technology
componentes Descripción : 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
Número de pieza(s) : T431616B T431616B-20S T431616B-20C T431616B-10S T431616B-10C
Taiwan Memory Technology
componentes Descripción : 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
Número de pieza(s) : M12L16161A M12L16161A(2Q) M12L16161A-5TIG2Q M12L16161A-7TIG2Q
Unspecified
componentes Descripción : 512K x 16bit x 2Banks Synchronous DRAM
Número de pieza(s) : T431616C T431616C-6S T431616C-6SG T431616C-7S T431616C-7SG
Taiwan Memory Technology
componentes Descripción : 512K x 16bit x 2Banks Synchronous DRAM
Número de pieza(s) : M12L16161A M12L16161A-5TIG M12L16161A-7BIG M12L16161A-7TIG
[Elite Semiconductor Memory Technology Inc.
componentes Descripción : 512K x 16bit x 2Banks Synchronous DRAM
Número de pieza(s) : DS_K4S161622E K4S161622E-TC10 K4S161622E-TC55 K4S161622E-TC60 K4S161622E-TC70 K4S161622E-TC80 K4S161622E
Samsung
componentes Descripción : 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL
Número de pieza(s) : HYS64V1000GS HYS64V1000GS-10 HYS64V1000GS-12 HYS64V1000GS-15 HYS64V1000GU-50 HYS64V1000GU-60 HYS64V1000GU-70 HYS72V1000GS HYS72V1000GS-10 HYS72V1000GS-12
Infineon Technologies
componentes Descripción : 1M x 64/72 SDRAM-Module
Número de pieza(s) : DS_K4S161622D K4S161622D K4S161622D-TC K4S161622D-TE K4S161622D-TI K4S161622D-TI/E K4S161622D-TI/E10 K4S161622D-TI/E50 K4S161622D-TI/E55 K4S161622D-TI/E60
Samsung
componentes Descripción : 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL
Número de pieza(s) : HYS64V1000GS HYS64V1000GU-50 HYS64V1000GU-60 HYS64V1000GU-70 HYS72V1000GS HYS72V1000GU-50 HYS72V1000GU-70 HYS64V1000GS-10 HYS64V1000GS-12 HYS64V1000GS-15
Siemens AG
componentes Descripción : 3.3V 1M x 64-Bit SDRAM Module 3.3V 1M x 72-Bit SDRAM Module
Número de pieza(s) : MT16LSDT1664A MT8LSDT864A MT16LSDT1664AG-662 MT16LSDT1664AG-662D2 MT16LSDT1664AG-10B MT16LSDT1664AG-10BD2 MT16LSDT1664AG-10C MT16LSDT1664AG-10CD2 MT8LSDT864AG-662 MT8LSDT864AG-662D2
Micron Technology
componentes Descripción : Synchronous DRAM MODULE
Número de pieza(s) : Q67100-Q2178 HYM64V1005GU-60 HYM72V1005GU HYM64V1005GU-5 HYM72V1005GU-50 Q67100-Q2177 HYM72V1005GU-60 Q67100-Q2176 HYM64V1005GU-50 HYM64V1005GU
Siemens AG
componentes Descripción : 3.3V 1M × 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module
Número de pieza(s) : T4312816A T4312816A-6S T4312816A-7S T4312816A-7.5S T4312816A-8S T4312816A-10S
Taiwan Memory Technology
componentes Descripción : 8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM
Número de pieza(s) : T4312816B T4312816B-6S T4312816B-6SG T4312816B-7S T4312816B-7SG
Taiwan Memory Technology
componentes Descripción : 8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM
Número de pieza(s) : HY57V641620HG HY57V641620HGLT-5 HY57V641620HGLT-5/55/6/7 HY57V641620HGLT-55 HY57V641620HGLT-6 HY57V641620HGLT-7 HY57V641620HGLT-8 HY57V641620HGLT-H HY57V641620HGLT-K HY57V641620HGLT-P
Hynix Semiconductor
componentes Descripción : 4 Banks x 1M x 16bit Synchronous DRAM
Número de pieza(s) : T4312816A T4312816A-6S T4312816A-7S T4312816A-7.5S T4312816A-8S T4312816A-10S
Taiwan Memory Technology
componentes Descripción : 8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM
Hynix Semiconductor
componentes Descripción : 4 Banks x 1M x 16bit Synchronous DRAM
Número de pieza(s) : HY57V651620B HY57V651620BTC-55 HY57V651620BTC-6 HY57V651620BTC-7 HY57V651620BTC-75 HY57V651620BTC-8 HY57V651620BTC-10P HY57V651620BTC-10S HY57V651620BTC-10 HY57V651620BLTC-55
Hynix Semiconductor
componentes Descripción : 4 Banks x 1M x 16bit Synchronous DRAM